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| BUH313 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV s SWITCH MODE POWER SUPPLIES 3 2 1 ISOWATT218 DESCRIPTION The BUH313 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CBO V CEO V EBO IC I CM IB I BM P tot T s tg Tj June 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) T otal Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Valu e 1300 600 10 5 8 3 5 44 -65 to 150 150 Unit V V V A A A A W o o C C 1/7 BUH313 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max 2.8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CES I EBO VCEO(s us) V EBO V CE(sat) V BE(sat ) h FE Parameter Collector Cut-off Current (V BE = 0) Emitter Cut- off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCT IVE LOAD Storage Time Fall Time T est Con ditio ns V CE = 1300 V V CE = 1300 V V EB = 5 V I C = 100 mA I E = 10 mA IC = 3 A IC = 3 A IC = 3 A IC = 3 A I B = 0.75 A I B = 0.75 A V CE = 5 V V CE = 5 V 5.5 3.5 1.6 110 3.5 340 2.4 200 s ns s ns 600 10 1.5 1.3 Tj = 125 o C Min . T yp. Max. 1 2 100 Unit mA mA A V V V V T j = 100 C o ts tf ts tf V CC = 400 V I B1 = 0.75 A IC = 3 A I B1 = 0.75 A IC = 3 A IB2 = 1.5 A f = 15625 Hz IB2 = -1.5 A V cef ly back = 1050 sin 106 t V 5 f = 31250 Hz IB2 = -1.5 A 6 V cef ly back = 1200 sin 10 t V 5 IC = 3 A I B1 = 0.75 A ts tf INDUCT IVE LOAD Storage Time Fall Time 3.5 270 s ns Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/7 BUH313 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7 BUH313 Power Losses at 32 KHz Switching Time Inductive Load at 32 KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and t f as a function of IB2 at both 16 KHz, 32 KHz and 64KHz scanning frequencies for choosing the optimum negative drive. The test circuit is 4/7 illustrated in figure 1. Inductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 = 2 f = 2 2 L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BUH313 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUH313 ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.45 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.017 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 6/7 BUH313 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 7/7 |
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